abbreviation
- J Vac Sci Technol B Microelectron Nanometer Struct
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal
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Overview
publication venue for
- Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates. 26:1093-1096. 2008-01-01
- Temperature dependence of photoluminescence oxygen-related deep levels in Al0.2Ga0.3In0.5P:Be grown by solid source molecular beam epitaxy. 26:1089-1092. 2008-01-01
- High quality of 830 nm material grown by solid source molecular beam epitaxy for laser device printing applications. 25:926-930. 2007-01-01
- Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy. 24:1591-1594. 2006-01-01
- Study of the homoepitaxial growth of GaAs on (631) oriented substrates. 24:1568-1571. 2006-01-01
- In situ reflectance-difference spectroscopy of doped CdTe and ZnTe grown by molecular beam epitaxy. 18:2224-2228. 2000-01-01
- Growth of ZnSe and ZnS films on Si(111) substrates with a nitrogen surface treatment. 17:1259-1262. 1999-01-01
- Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatment 2004-01-01
- Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system 2002-01-01
- Effects of the substrate tilting angle on the molecular beam epitaxial growth of GaAs on Si(110) 2001-01-01
- Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data 2001-01-01
- Raman study of luminescent spark processed porous GaAs 2001-01-01
publisher
- American Institute of Physics Inc. Publisher