selected publications

• article

  • Self-assembling conditions of 4C10Sn nanoclusters in Ge:(C, Sn).  Physica B: Condensed Matter.  404:4543-4545. 2009-01-01
  • Influence of the GaAs substrate orientation on the composition of GaxIn1 - xP (x ≈ 0.5) grown by LPE and MOCVD.  Thin Solid Films.  516:8092-8095. 2008-01-01
  • Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn.  Physica E: Low-Dimensional Systems and Nanostructures.  40:883-885. 2008-01-01
  • Growth of quantum-well heterostructures by liquid phase epitaxy.  Critical Reviews in Solid State and Materials Sciences.  31:1-13. 2006-01-01

• conference paper

  • GaIn as Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE).  Journal of Physics: Conference Series. -. 2009-01-01