selected publications

• article

  • Analysis of thermodynamic conditions to grow GaAsP epitaxial layers by LPE on GaAs and GaP substrates.  MRS Advances.  -. 2020-01-01
  • Vision-aided system for obtaining a required weight by efficient choice of irregular fragments.  Journal of Applied Research and Technology.  15:140-142. 2017-01-01
  • High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE.  Infrared Physics and Technology.  79:32-35. 2016-01-01
  • Sn doped GaSb grown by liquid phase epitaxy.  Thin Solid Films.  548:168-170. 2013-01-01
  • Effect of substrate conductivity on the thickness and composition of GaAlSb epitaxial layers grown by liquid phase epitaxy.  Thin Solid Films.  519:3029-3031. 2011-01-01

• conference paper

  • Influence of substrate conductivity type on the thickness and composition of epitaxial layers grown by Liquid Phase Epitaxy.  Thin Solid Films. 700-702. 2011-01-01
  • GaSb grown from Sn solvent at low temperatures by LPE.  Journal of Physics: Conference Series. -. 2009-01-01