Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data

One of the possible causes for surface induced bulk anisotropies is outlined. This is the stress induced by the dimers, but acting collectively on a macroscopic scale larger than the dimer size, on the bulk respectively epilayer, thus modifying the dielectric function of the underlying semiconductor.

Binding energy; Dimerization; Electronic density of states; Molecular beam epitaxy; Permittivity; Phase transitions; Photons; Reflection high energy electron diffraction; Resonance; Spectroscopy; Stresses; Anisotropic in-plain strain; Critical point resonances; Fermi level pinning; Reflectance difference spectroscopy; Semiconductor materials

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