selected publications

• article

  • Dislocations in MBE-grown ZnSe/GaAs(001) epitaxial layers.  Diffusion and Defect Data. Pt A Defect and Diffusion Forum.  173:31-46. 1999-01-01
  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/ GaAs by phase selection in photoreflectance.  Journal of Applied Physics.  86:425-429. 1999-01-01
  • Observation of zinc-blende to diamond transition in metastable (GaAs)1-x(Ge2)x alloys by Raman scattering.  Solid State Communications.  109:295-300. 1999-01-01
  • Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs.  Journal of Physics D: Applied Physics.  32:1293-1301. 1999-01-01
  • Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: A possible effect of pit filling and difference in thermal expansion coefficients.  Applied Surface Science.  151:271-279. 1999-01-01
  • Structural study of metastable (GaAs)1-x(Ge2)x thin films grown by RF magnetron sputtering.  Journal of Crystal Growth.  197:783-788. 1999-01-01
  • Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD.  Journal of Crystal Growth.  194:301-308. 1998-01-01
  • Observation of stress effects on GaAs at the interface of molecular beam epitaxy grown ZnSe/GaAs(100) heterostructures.  Applied Surface Science.  134:95-102. 1998-01-01
  • Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers.  Journal of Applied Physics.  84:1551-1557. 1998-01-01