selected publications

• article

  • Photoluminescence and secondary ion mass spectrometry study of layer-by-layer grown Zn1-xCdxSe quantum wells.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics.  29:-. 2011-01-01
  • GaAs surface oxide desorption by annealing in ultra high vacuum.  Thin Solid Films.  373:159-163. 2000-01-01
  • Study of the GaAs surface oxide desorption process by annealing in ultra high vacuum conditions.  Revista Mexicana de Fisica.  46:152-158. 2000-01-01
  • Dislocations in MBE-grown ZnSe/GaAs(001) epitaxial layers.  Diffusion and Defect Data. Pt A Defect and Diffusion Forum.  173:31-46. 1999-01-01
  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/ GaAs by phase selection in photoreflectance.  Journal of Applied Physics.  86:425-429. 1999-01-01
  • Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs.  Journal of Physics D: Applied Physics.  32:1293-1301. 1999-01-01
  • Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: A possible effect of pit filling and difference in thermal expansion coefficients.  Applied Surface Science.  151:271-279. 1999-01-01
  • Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD.  Journal of Crystal Growth.  194:301-308. 1998-01-01
  • Observation of stress effects on GaAs at the interface of molecular beam epitaxy grown ZnSe/GaAs(100) heterostructures.  Applied Surface Science.  134:95-102. 1998-01-01
  • Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers.  Journal of Applied Physics.  84:1551-1557. 1998-01-01
  • Investigation of the structural properties of MBE grown ZnSe/GaAs heterostructures.  Journal of Crystal Growth.  175-176:571-576. 1997-01-01
  • Optical and structural properties of ZnSe/GaAs interfaces.  Applied Surface Science.  112:165-170. 1997-01-01
  • Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy.  Japanese Journal of Applied Physics, Part 2: Letters.  36:L1153-L1156. 1997-01-01

• conference paper

  • Interaction between Zn and Cd atoms during the atomic layer epitaxy growth of CdZnTe/ZnTe quantum wells.  Surface Review and Letters. 1725-1728. 2002-01-01
  • Tuning of the alloy composition of Zn1-xCdxSe quantum wells by submonolayer pulsed beam epitaxy.  MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 335-336. 2002-01-01