Japanese Journal of Applied Physics, Part 2: Letters Journal

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Overview

abbreviation

• Jpn J Appl Phys Part 2 Letter

publication venue for

• Molecular beam epitaxial growth of GaAs on (631) oriented substrates.  44:L1556-L1559. 2005-01-01
• Self-assembled GaAs quantum dots on pseudomorphic Si layers grown on AlGaAs by molecular beam epitaxy.  41:L916-L918. 2002-01-01
• Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy.  36:L1153-L1156. 1997-01-01
• New ordering of the InAs growth through high-temperature treatment of the GaAs (100) substrates 2003-01-01

publisher

• Japan Society of Applied Physics  Publisher

Identity

International Standard Serial Number (ISSN)

• 00214922

Additional Document Info

coden

• JAPLD