selected publications

• article

  • Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy.  Applied Surface Science.  333:92-95. 2015-01-01
  • Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy.  Nanotechnology.  21:-. 2010-01-01
  • Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates.  Physica Status Solidi (A) Applications and Materials Science.  206:836-841. 2009-01-01
  • Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  26:1093-1096. 2008-01-01

• conference paper

  • Self-assembly of nanostructures on (631)-oriented GaAs substrates.  AIP Conference Proceedings. 210-215. 2007-01-01