selected publications

• article

  • Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy.  Nanotechnology.  21:-. 2010-01-01
  • Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates.  Physica Status Solidi (A) Applications and Materials Science.  206:836-841. 2009-01-01
  • Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments.  Journal of Crystal Growth.  311:1666-1670. 2009-01-01
  • Study of optical properties of GaAsN layers prepared by molecular beam epitaxy.  Journal of Crystal Growth.  301-302:565-569. 2007-01-01
  • Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy.  Journal of Crystal Growth.  301-302:884-888. 2007-01-01

• conference paper

  • Optical transitions in AlGaAs/GaAs quantum wires on GaAs(6 3 1) substrates studied by photoreflectance spectroscopy.  Physica E: Low-Dimensional Systems and Nanostructures. 2571-2574. 2010-01-01
  • InGaAs/GaAs quantum wells and quantum dots on GaAs(11n) substrates studied by photoreflectance spectroscopy.  Physica Status Solidi (A) Applications and Materials Science. 390-399. 2007-01-01