selected publications
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article
- Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy. Nanotechnology. 21:-. 2010-01-01
- Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates. Physica Status Solidi (A) Applications and Materials Science. 206:836-841. 2009-01-01
- Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments. Journal of Crystal Growth. 311:1666-1670. 2009-01-01
- Study of optical properties of GaAsN layers prepared by molecular beam epitaxy. Journal of Crystal Growth. 301-302:565-569. 2007-01-01
- Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy. Journal of Crystal Growth. 301-302:884-888. 2007-01-01
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conference paper
- Optical transitions in AlGaAs/GaAs quantum wires on GaAs(6 3 1) substrates studied by photoreflectance spectroscopy. Physica E: Low-Dimensional Systems and Nanostructures. 2571-2574. 2010-01-01
- InGaAs/GaAs quantum wells and quantum dots on GaAs(11n) substrates studied by photoreflectance spectroscopy. Physica Status Solidi (A) Applications and Materials Science. 390-399. 2007-01-01