selected publications

• article

  • One electron and discrete excitonic contributions to the optical response of semiconductors around E1 transition: Analysis in the reciprocal space.  Journal of the Optical Society of America B: Optical Physics.  26:725-733. 2009-01-01

• conference paper

  • Real-time reflectance anisotropy spectroscopy of MBE AlAs/GaAs interfaces.  Latin America Optics and Photonics Conference, LAOP 2014. -. 2014-01-01
  • Dots-in-a-well InGaAs based laser probed by photoreflectance-anisotropy spectroscopy.  IEEExPO 2009 - 3rd Conference of University of Guanajuato IEEE Students Chapter. 8-11. 2009-01-01
  • Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs.  Physica Status Solidi (C) Current Topics in Solid State Physics. 2561-2564. 2008-01-01
  • Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001).  Physica Status Solidi (C) Current Topics in Solid State Physics. 2573-2577. 2008-01-01
  • Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs.  Physica Status Solidi (C) Current Topics in Solid State Physics. 2565-2568. 2008-01-01
  Surface strain contributions to the lineshapes of reflectance difference spectra for one-electron and discrete-exciton transitions.  Physica Status Solidi (C) Current Topics in Solid State Physics. 2591-2594. 2008-01-01
  Reflectance-difference Spectroscopy as an optical probe for the in situ determination of doping levels in GaAs.  Proceedings of SPIE - The International Society for Optical Engineering. -. 2007-01-01
  Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in gaas.  Multiconference on Electronics and Photonics, MEP 2006. 4-7. 2006-01-01
  ... more