selected publications
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article
- GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots. Physica E: Low-Dimensional Systems and Nanostructures. 124:-. 2020-01-01
- Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo. Revista Mexicana de Fisica. 65:43-48. 2018-01-01
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conference paper
- Geometry of nanostructures analyzed for terahertz applications. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. -. 2017-01-01
- Dots-in-a-well InGaAs based laser probed by photoreflectance-anisotropy spectroscopy. IEEExPO 2009 - 3rd Conference of University of Guanajuato IEEE Students Chapter. 8-11. 2009-01-01
- Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs. Physica Status Solidi (C) Current Topics in Solid State Physics. 2565-2568. 2008-01-01
- Reflectance-difference Spectroscopy as an optical probe for the in situ determination of doping levels in GaAs. Proceedings of SPIE - The International Society for Optical Engineering. -. 2007-01-01
- Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in gaas. Multiconference on Electronics and Photonics, MEP 2006. 4-7. 2006-01-01