selected publications

• letter

  • Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition.  Thin Solid Films. 24-26. 2014-01-01

• article

  • In situ and real-time optical study of passive chemical etching of porous silicon and its impact on the fabrication of thin layers and multilayers.  Journal of Applied Physics.  134:8-. 2023-01-01
  • Spikes formation in the dispersion relation for dielectric–graphene photonic crystal.  Physica B: Condensed Matter.  625:-. 2022-01-01
  • Tailoring the UV–visible reflectivity range of VO2 thin films.  Materials Letters.  323:-. 2022-01-01
  • The identification of byproducts from the catalytic reduction reaction of 4-nitrophenol to 4-aminophenol: A systematic spectroscopic study.  Journal of Environmental Management.  316:-. 2022-01-01
    
  • Optimization of wide-band quasi-omnidirectional 1-D photonic structures.  Optical Materials.  117:-. 2021-01-01
    
  A wide band porous silicon omnidirectional mirror for the near infrared range.  Journal of Applied Physics.  127:-. 2020-01-01
  Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy.  Applied Optics.  59:D39-D42. 2020-01-01
  
  Temperature-dependent infrared ellipsometry of Mo-doped VO2 thin films across the insulator to metal transition.  Scientific Reports.  10:-. 2020-01-01
  
  An algorithm for the in situ analysis of optical reflectance anisotropy spectra.  Journal of Crystal Growth.  515:9-15. 2019-01-01
  
  TM plasmonic modes in a multilayer graphene-dielectric structure.  Superlattices and Microstructures.  125:247-255. 2019-01-01
  Tailoring the transmission and absorption spectra in a graphene-dielectric multilayer system for Lorentzian profile in the chemical potential.  Superlattices and Microstructures.  130:68-75. 2019-01-01
  
  On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy.  Applied Surface Science.  439:963-967. 2018-01-01
  Reflectivity of 1D photonic crystals: A comparison of computational schemes with experimental results.  International Journal of Modern Physics B.  32:-. 2018-01-01
  Digital holographic interferometry applied to the investigation of ignition process.  Optics Express.  25:13190-13198. 2017-01-01
  
  Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001).  Applied Surface Science.  421:608-610. 2017-01-01
  A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring.  Measurement Science and Technology.  26:-. 2015-01-01
  Spectral barcodes by superposition of quasiperiodic refractive index profiles.  Optics Express.  23:8272-8280. 2015-01-01
  Design and optimization of antireflecting coatings from nanostructured porous silicon dielectric multilayers.  Solar Energy Materials and Solar Cells.  123:144-149. 2014-01-01
  Photoluminescence lineshape of ZnO.  AIP Advances.  4:-. 2014-01-01
  
  Controlling the optical properties of composite multilayered photonic structures: Effect of superposition.  Optics Express.  21:17324-17339. 2013-01-01
  Omnidirectional photonic bangap in dielectric mirrors: A comparative study.  Journal of Physics D: Applied Physics.  45:-. 2012-01-01
  
  Study of the omnidirectional photonic bandgap for dielectric mirrors based on porous silicon: Effect of optical and physical thickness.  Nanoscale Research Letters.  7:-. 2012-01-01
  White metal-like omnidirectional mirror from porous silicon dielectric multilayers.  Applied Physics Letters.  101:-. 2012-01-01
  Effect of interface gradient on the optical properties of multilayered porous silicon photonic structures.  Journal of Physics D: Applied Physics.  44:-. 2011-01-01
  ... more

• conference paper

  • Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition.  AIP Conference Proceedings. -. 2018-01-01
  • Real-time optical monitoring of semiconductor epitaxial growth.  AIP Conference Proceedings. -. 2018-01-01
  • Electron subband structure and mobility trends in p-n delta-doped quantum wells in Si.  Progress in Electromagnetics Research Symposium. 962-965. 2008-01-01
  • Enhancement of the electronic confinement improves the mobility in p-n-p delta-doped quantum wells in Si.  Progress in Electromagnetics Research Symposium. 958-961. 2008-01-01