selected publications

• article

  • Fabricación y caracterización de pozos cuánticos para el estudio de la interacción luz-materia [Fabrication and characterization of quantum wells for the study of light-matter interaction].  CienciaUAT.  17:-. 2023-01-01
  • Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy.  Applied Optics.  59:D39-D42. 2020-01-01
    
  • An algorithm for the in situ analysis of optical reflectance anisotropy spectra.  Journal of Crystal Growth.  515:9-15. 2019-01-01
    
  • On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy.  Applied Surface Science.  439:963-967. 2018-01-01
  • Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001).  Applied Surface Science.  421:608-610. 2017-01-01
  A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring.  Measurement Science and Technology.  26:-. 2015-01-01
  Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring.  Journal of Crystal Growth.  425:21-24. 2015-01-01
  Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth.  APL Materials.  2:-. 2014-01-01
  ... more

• conference paper

  • Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition.  AIP Conference Proceedings. -. 2018-01-01
  • Real-time optical monitoring of semiconductor epitaxial growth.  AIP Conference Proceedings. -. 2018-01-01
  • A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution.  Review of Scientific Instruments. -. 2012-01-01