selected publications

• article

  • Dislocations in MBE-grown ZnSe/GaAs(001) epitaxial layers.  Diffusion and Defect Data. Pt A Defect and Diffusion Forum.  173:31-46. 1999-01-01
  • Epitaxial Growth of Strained Ge Films on GaAs(001).  Thin Solid Films.  352:269-272. 1999-01-01
  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/ GaAs by phase selection in photoreflectance.  Journal of Applied Physics.  86:425-429. 1999-01-01
  • Observation of zinc-blende to diamond transition in metastable (GaAs)1-x(Ge2)x alloys by Raman scattering.  Solid State Communications.  109:295-300. 1999-01-01
  • Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs.  Journal of Physics D: Applied Physics.  32:1293-1301. 1999-01-01
  • Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: A possible effect of pit filling and difference in thermal expansion coefficients.  Applied Surface Science.  151:271-279. 1999-01-01
  • Structural study of metastable (GaAs)1-x(Ge2)x thin films grown by RF magnetron sputtering.  Journal of Crystal Growth.  197:783-788. 1999-01-01
  • Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD.  Journal of Crystal Growth.  194:301-308. 1998-01-01
  • Excitonic transitions in (GaAs)1-x(Ge2)x/GaAs multilayers grown by magnetron sputtering.  Applied Physics Letters.  72:94-96. 1998-01-01

• conference paper

  • Raman and FTIR spectroscopy of GaSb and AlxGa1-X alloys with nanometric thickness grown at low temperatures by liquid phase epitaxy.  AIP Conference Proceedings. 1258-1261. 2008-01-01