selected publications

• article

  • Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: Strain, relaxation and lattice parameter.  Journal of Physics D: Applied Physics.  35:1408-1413. 2002-01-01
  • Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers.  Thin Solid Films.  373:37-40. 2000-01-01
  • Molecular beam epitaxial growth of ZnSe layers on GaAs and Si substrates.  Physica Status Solidi (B) Basic Research.  220:99-109. 2000-01-01
  • Reduction in the crystal defect density of ZnSe layers grown by molecular beam epitaxy.  Revista Mexicana de Fisica.  46:148-152. 2000-01-01
  • Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers.  Journal of Applied Physics.  84:1551-1557. 1998-01-01

• conference paper

  • Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates.  Journal of Crystal Growth. 639-644. 2001-01-01