selected publications
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article
- Structural characterization of AlGaAs:Si/GaAs (631) heterostructures as a function of As pressure. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34:-. 2016-01-01
- Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure. Journal of Crystal Growth. 425:85-88. 2015-01-01
- Determination of surface electric potential by photoreflectance spectroscopy of HEMT heterostructures. Journal of Crystal Growth. 378:100-104. 2013-01-01
- MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures. Journal of Crystal Growth. 378:88-91. 2013-01-01
- Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substrates. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30:-. 2012-01-01
- Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30:-. 2012-01-01
- As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A. Journal of Crystal Growth. 316:149-152. 2011-01-01
- Effect of oxygen incorporation on the vibrational properties of Al 0.2Ga0.3In0.5P:Be films. Thin Solid Films. 520:53-56. 2011-01-01
- Study of the conduction-type conversion in Si-doped (631)A GaAs layers grown by molecular beam epitaxy. Physica Status Solidi (C) Current Topics in Solid State Physics. 8:282-284. 2011-01-01
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conference paper
- Effect of the surface on optical properties of AlGaAs/GaAs heterostructures with double 2-DEG. Animal. A57-A62. 2013-01-01
- Effect of the surface on optical properties of AlGaAs/GaAs heterostructures with double 2-DEG. Materials Research Society Symposium Proceedings. A57-A62. 2013-01-01
- Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. C3C14-C3C18. 2010-01-01