Raman scattering from fully strained Ge1-xSnx (x≤0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy

Fully strained single-crystal Ge1-xSnx alloys (x≤0.22) deposited on Ge(001)2×l by low-temperature molecular beam epitaxy have been studied by Raman scattering. The results are characterized by a Ge-Ge longitudinal optical (LO) phonon line, which shifts to lower frequencies with increasing x. Samples capped with a 200-Å-thick Ge layer exhibit a second Ge-Ge LO phonon line whose position remains close to that expected from bulk Ge. For all samples, capped and uncapped, the frequency shift ΔωGeSn of the Ge-Ge LO phonon line from the G1-xSnx layer, with respect to the position for bulk Ge, is linear with the Sn fraction x(ΔωGeSn= -76.8x cm-1) over the entire composition range. Using the elastic constants, the Grüneisen parameter, and the shear phonon deformation parameter for Ge, we calculate the contribution of compressive strain to the total frequency shift to be Δωstrain=63.8x cm-1. Thus, the LO phonon shift in Ge1-xSnx due to substitutional-Sn-induced bond stretching in fully relaxed alloys is estimated to be Δωbond = - 140.6x cm-1. © 1998 American Institute of Physics.

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