selected publications
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article
- Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy. Applied Optics. 59:D39-D42. 2020-01-01
- An algorithm for the in situ analysis of optical reflectance anisotropy spectra. Journal of Crystal Growth. 515:9-15. 2019-01-01
- On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy. Applied Surface Science. 439:963-967. 2018-01-01
- Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001). Applied Surface Science. 421:608-610. 2017-01-01
- A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring. Measurement Science and Technology. 26:-. 2015-01-01
- Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring. Journal of Crystal Growth. 425:21-24. 2015-01-01
- Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth. APL Materials. 2:-. 2014-01-01
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conference paper
- Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition. AIP Conference Proceedings. -. 2018-01-01
- Real-time optical monitoring of semiconductor epitaxial growth. AIP Conference Proceedings. -. 2018-01-01
- A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution. Review of Scientific Instruments. -. 2012-01-01