selected publications

• article

  • Characterization of Al0.047Ga0.953Sb layers grown on GaSb using reciprocal space maps 2016-01-01
  • High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE.  Infrared Physics and Technology.  79:32-35. 2016-01-01
  • Effect of substrate conductivity on the thickness and composition of GaAlSb epitaxial layers grown by liquid phase epitaxy.  Thin Solid Films.  519:3029-3031. 2011-01-01

• conference paper

  • Influence of substrate conductivity type on the thickness and composition of epitaxial layers grown by Liquid Phase Epitaxy.  Thin Solid Films. 700-702. 2011-01-01
  • Study of Al0.065Ga0.935Sb avalanche photodetectors for 1.55 μm of wavelength by liquid phase epitaxy at low temperature.  Surface Review and Letters. 1741-1745. 2002-01-01