Strain oscillations probed with light
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We show that reflectance difference spectroscopy (RDS) is sensitive to the inhomogeneous surface and thin film strain which builds up during hetero- and homoepitaxial growth. The RDS signal is affected by the local, mean square atomic displacements in the substrate resulting from the stress relaxation of strained adlayer islands. For layer-by-layer growth an oscillatory variation of the RDS intensity is observed. These results demonstrate the potentiality of RDS to probe the growth kinetics on structurally anisotropic surfaces. © 2006 The American Physical Society.
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Epitaxial growth; Light; Oscillations; Reflection; Spectroscopic analysis; Thin films; Hetero- and homoepitaxial growth; Layer-by-layer growth; Reflectance difference spectroscopy; Strain oscillations; Strain control
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