selected publications

• article

  • Study of the homoepitaxial growth of GaAs on (631) oriented substrates.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  24:1568-1571. 2006-01-01
  • Epitaxial Growth of Strained Ge Films on GaAs(001).  Thin Solid Films.  352:269-272. 1999-01-01
  • Micro structure of spark-processed blue luminescent CdTe, GaSb, and InSb.  Thin Solid Films.  281-282:552-555. 1996-01-01
  • Electroreflectance, photoreflectance, and photoabsorption properties of polycrystalline CdTe thin films prepared by the gradient recrystallization and growth technique.  Journal of Applied Physics.  58:2066-2069. 1985-01-01
  • Emission properties in electrolytically prepared CdTe p-n junctions.  Applied Physics Letters.  39:433-434. 1981-01-01
  • Study of the interface changes during operation of nCdTe-electrolyte solar cells.  Journal of Applied Physics.  50:5391-5396. 1979-01-01

• conference paper

  • InGaAs/GaAs quantum wells and quantum dots on GaAs(11n) substrates studied by photoreflectance spectroscopy.  Physica Status Solidi (A) Applications and Materials Science. 390-399. 2007-01-01
  • Characterization of SiO2 layers on Si wafers using atomic force microscopy layers on Si wafers using atomic force microscopy.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2572-2576. 1994-01-01
  • Mesostructure of photoluminescent porous silicon.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2565-2571. 1994-01-01