abstract

• The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (P As) and the cation/anion terminated surface, i.e., A- or B-type GaAs(631). The self-organization of QDs occurs for both surface types along , while the QD shape and size distribution were found to be different for the self-assembly on the A- and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs. © 2018 The Japan Society of Applied Physics.

authors

• Cortés Mestizo Irving Eduardo
• Espinosa Vega Leticia Ithsmel
• Espinoza-Figueroa J.Á.
• Eugenio-Lopez E.
• Gorbatchev Andrei
• Mercado-Ornelas C.A.
• Méndez García Víctor Hugo
• Patil P.K.
• Shimomura S.

publication date

• 2018-01-01

published in

• Japanese Journal of Applied Physics  Journal

keywords

• Gallium arsenide; Gallium compounds; Indium arsenide; Indium compounds; Nanocrystals; Optical properties; Optical waveguides; Photoluminescence spectroscopy; Self assembly; Semiconducting gallium; Semiconductor quantum dots; Beam equivalent pressure; Crystallographic plane; Energy transitions; GaAs substrates; Mis-orientation; Self ordering; Self organizations; Shape and size; Boron compounds

Digital Object Identifier (DOI)

• 10.7567/JJAP.57.025201

start page

end page

volume

• 57

issue

• 2