abbreviation
- Jpn. J. Appl. Phys.
Japanese Journal of Applied Physics
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publication venue for
- Self-ordering of InAs nanostructures on (631)A/B GaAs substrates. 57:-. 2018-01-01
- Study of InAlAs/InGaAs self-switching diodes for energy harvesting applications. 55:-. 2016-01-01
- Characterization of Si3N4/Si(111) thin films by reflectance difference spectroscopy. 54:-. 2015-01-01
- Polarization and excitation dependence of photoluminescence of InAs quantum wires and dots grown on GaAs(6̄3̄1̄). 50:-. 2011-01-01