abstract

• In this work, the influence of the surface depletion layer on the formation of a two-dimensional electron gas in AlGaAs/GaAs modulated doped heterostructures is studied. The authors explore a method for estimating the depletion region inside of the GaAs-based heterostructures by using the longitudinal optical and L- amplitude modes observed in Raman spectra, which are supported by the modeling results. The authors found that the position of the topmost doping layer changes the electron distribution in the heterostructure and decreases the influence of the depletion layer. Similar effects are perceived when an optimized solution of (NH4)2SX and isopropanol is employed. The authors present a method to evaluate the formation of a double two-dimensional electron gas in a heterostructure by the adequate use of modulation line in the photoreflectance spectroscopy. © 2016 American Vacuum Society.

authors

• Briones E.
• Briones J.
• Cisneros-De-La-Rosa A.
• Cortés Mestizo Irving Eduardo
• Droopad R.
• Espinosa Vega Leticia Ithsmel
• Espinoza-Figueroa J.Á.
• Eugenio-Lopez E.
• Méndez García Víctor Hugo
• Yee-Rendon C.
• Zamora-Peredo L.

publication date

• 2016-01-01

funding provided via

• 2015-255489, 248071, PNCPN2014-01  Grant
• CEMIESOL-22  Grant

published in

• Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics  Journal

keywords

• Aluminum gallium arsenide; Electron gas; Heterojunctions; Depletion layer; Depletion region; Electron distributions; Longitudinal optical; Model results; Optimized solutions; Photoreflectance spectroscopy; Surface depletion; Two dimensional electron gas

Digital Object Identifier (DOI)

• 10.1116/1.4942898

start page

end page

volume

• 34

issue

• 2