selected publications

• article

  • GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots.  Physica E: Low-Dimensional Systems and Nanostructures.  124:-. 2020-01-01
  • Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy.  Thin Solid Films.  702:-. 2020-01-01
  • Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures.  Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics.  34:-. 2016-01-01
    
  • Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films.  Journal of Spectroscopy.  2016:-. 2016-01-01
  • Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates.  Physica Status Solidi (A) Applications and Materials Science.  206:836-841. 2009-01-01
  Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments.  Journal of Crystal Growth.  311:1666-1670. 2009-01-01
  Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  26:1093-1096. 2008-01-01
  P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE.  Journal of Crystal Growth.  301-302:84-87. 2007-01-01
  Self-assembled GaAs quantum dots on pseudomorphic Si layers grown on AlGaAs by molecular beam epitaxy.  Japanese Journal of Applied Physics, Part 2: Letters.  41:L916-L918. 2002-01-01
  ... more

• conference paper

  • Optical characterization of Alx Ga1-x As/GaAs modulation-doped heterostructures grown under As2 and As4 fluxes.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. C3I13-C3I16. 2010-01-01
  • Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. C3C14-C3C18. 2010-01-01
  • Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard.  2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. 424-427. 2005-01-01
  • Photoreflectance investigations of HEMT structures grown by MBE.  Journal of Crystal Growth. 591-595. 2005-01-01
  • Quantum Hall effect devices based on AlGaAs/GaAs structures studied by photoreflectance spectroscopy.  Applied Surface Science. 204-208. 2004-01-01
  Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy.  Journal of Crystal Growth. 201-207. 2003-01-01
  Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures.  Microelectronics Journal. 521-523. 2003-01-01
  Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots.  Journal of Crystal Growth. 236-242. 2003-01-01
  Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy.  MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 367-368. 2002-01-01
  Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots.  MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 347-348. 2002-01-01
  ... more
• Triboelectric and Piezoelectric Nanogenerators for Self-Powered Healthcare Monitoring Devices: Operating Principles, Challenges, and Perspectives.  Nanomaterials. -. 2022-01-01
  
• Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. -. 2014-01-01