selected publications

• article

  • Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments.  Journal of Crystal Growth.  311:1666-1670. 2009-01-01
  • Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy.  Microelectronics Journal.  39:1248-1250. 2008-01-01
  • Study of optical properties of GaAsN layers prepared by molecular beam epitaxy.  Journal of Crystal Growth.  301-302:565-569. 2007-01-01
  • Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy.  Journal of Crystal Growth.  301-302:884-888. 2007-01-01
  • Photoreflectance study of InAs quantum dots on GaAs(n 1 1) substrates.  Physica E: Low-Dimensional Systems and Nanostructures.  32:139-143. 2006-01-01
  Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  24:1591-1594. 2006-01-01
  Structure and homoepitaxial growth of GaAs(6 3 1).  Applied Surface Science.  252:5530-5533. 2006-01-01
  Study of the homoepitaxial growth of GaAs on (631) oriented substrates.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  24:1568-1571. 2006-01-01
  Molecular beam epitaxial growth of GaAs on (631) oriented substrates.  Japanese Journal of Applied Physics, Part 2: Letters.  44:L1556-L1559. 2005-01-01
  ... more

• conference paper

  • Self-assembly of nanostructures on (631)-oriented GaAs substrates.  AIP Conference Proceedings. 210-215. 2007-01-01