High sensitivity detection of trace impurities in the presence of other impurity species: The shallow thermal donors in Cz-Silicon Article uri icon

abstract

  • The combination of the techniques of Fourier transform spectroscopy (FTS) with the highly sensitive method of photothermal ionization spectroscopy (PTIS) opens up new possibilities for the investigation of trace impurities in semiconductors. The interpretation of the PTIS spectra when many donor species contribute to the photoconductivity is discussed with reference to the case of the shallow thermal donors in silicon. © 1988 Springer-Verlag.

publication date

  • 1988-01-01