abstract

• We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed at temperatures of 580°C and 430°C, in both n and p-type doped films and for both (2×4) and c(4×4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 1016 - 1019 cm-3. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions.

authors

• Balderas Navarro Raúl Eduardo
• Lara-Velázquez I.
• Lastras Martínez Alfonso
• Lastras Martínez Luis Felipe
• Ortega-Gallegos J.

publication date

• 2007-01-01

published in

• Proceedings of SPIE - The International Society for Optical Engineering  Proceedings

keywords

• Carrier density; In situ monitoring Carrier concentration; Doping (additives); Emission spectroscopy; Light reflection; Molecular beam epitaxy; Semiconducting gallium arsenide; Doping levels; Growth conditions; Reflectance Difference Spectroscopy; Optical systems

Digital Object Identifier (DOI)

• 10.1117/12.742363

start page

end page

volume

• 6422