Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs Conference Paper uri icon

abstract

  • We report on a theoretical-experimental study of reflectance anisotropy spectroscopy (RAS) of GaAs (001) crystals under uniaxial stress. The study was carried out in the energy region around the fundamental transition. RAS spectra in the energy range from 1.2-1.7 eV were measured with a photoelastic-modulator- based spectrometer. To induce an optical anisotropy, the GaAs crystals were thinned down to 400 μm and an calibrated uniaxial stress was applied by deflection. RAS showed a line shape consisting of an oscillation at around E0. On the basis of a perturbative approach employing the Pikus-Bir Hamiltonian, we calculated the RAS line shape and found a close agreement with the experimental spectra. © 2008 Wiley-VCH Verlag GmbH %26amp; Co. KGaA.
  • We report on a theoretical-experimental study of reflectance anisotropy spectroscopy (RAS) of GaAs (001) crystals under uniaxial stress. The study was carried out in the energy region around the fundamental transition. RAS spectra in the energy range from 1.2-1.7 eV were measured with a photoelastic-modulator- based spectrometer. To induce an optical anisotropy, the GaAs crystals were thinned down to 400 μm and an calibrated uniaxial stress was applied by deflection. RAS showed a line shape consisting of an oscillation at around E0. On the basis of a perturbative approach employing the Pikus-Bir Hamiltonian, we calculated the RAS line shape and found a close agreement with the experimental spectra. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

publication date

  • 2008-01-01