Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in gaas
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abstract
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We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed in situ at epitaxial growth temperature (580 °C) in both n and p-type doping films in the range from 5x1016-1019 cm-3. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions. ©2006 IEEE.
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Research
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Carrier density; In situ monitoring Epitaxial films; Gallium alloys; Internet; Internet service providers; Molecular beam epitaxy; Optics; Photonics; Reflection; Semiconducting gallium; Doping levels; GaAs(CsO); In-situ; Optical probing; P-type doping; Reflectance difference spectroscopy (RDS); Epitaxial growth
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