Dots-in-a-well InGaAs based laser probed by photoreflectance-anisotropy spectroscopy
Conference Paper
-
- Overview
-
- Research
-
- Identity
-
- Additional Document Info
-
- View All
-
Overview
abstract
-
We have used photoreflectance-anisotropy (PRA) spectroscopy as an optical probe for the characterization of heterostructure lasers with an active region consisting of InAs quantum dots (QDs) embedded in a series of three stacked In0.15Ga0.85As quantum wells (QWs). By probing the in-plane optical anisotropy, we demonstrate that PRA spectroscopy has the ability to detect and differentiate layers with quantum dimensions, as the anisotropy PRA signal stems from QWs and QDs. We show that PRA spectroscopy can be an attractive tool for the characterization of buried interfaces in nanostructured devices at room temperature. ©2009 IEEE.
publication date
published in
Research
keywords
-
Active regions; Buried interface; Dots in a wells; Heterostructure lasers; In-plane; Inas quantum dots; Nano-structured; Optical probe; Photoreflectance; Quantum dimension; Quantum well; Room temperature; Anisotropy; Gallium; Quantum well lasers; Semiconducting indium; Semiconductor quantum dots; Quantum dot lasers
Identity
Digital Object Identifier (DOI)
Additional Document Info