Reconstruction induced surface strain in GaAs (001) surfaces characterized by reflectance modulated spectroscopies

Reflectance modulated (RM) spectroscopies constitute powerful tools for the study and characterization of the piezo-optical properties of semiconductors. RM techniques are very sensitivity to the orientation of the surface dimers in reconstructed surfaces, as well as to the surface electric field and to the surface stoichiometry. In this communication we report on RM experiments carried out in ultra high vacuum on GaAs (001) surfaces with different reconstructions. We show experimentally that between c(4×4) and (2×4) surfaces there is an inversion of the surface electric field which is induced by a direct piezoelectric effect related to the surface strain. © 2007 American Institute of Physics.

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