abstract

• We have used transmission anisotropy (TA) and photoreflectance-difference (PRD) spectroscopies as tools for the characterization of heterostructures consisting of 100 Å Gax In1-x Asy Sb1-y quantum wells with 200 Å Alx Ga1-x Asy Sb1-y barriers. Exctions associated to two allowed and two forbidden transitions of the confined levels in the quantum wells (QWs) are detected with PRD at 15 K. Using TA spectroscopy they all can be clearly resolved at room temperature. The signal of the anisotropy is proved experimentally to stem exclusively from the QWs and the surrounding interfaces. We show TA spectroscopy to be a powerful tool for interface characterization in heterostructures with energy gap below that of the substrate. © 2005 American Institute of Physics.

authors

• Balderas Navarro Raúl Eduardo
• Cerda Méndez Edgar Armando
• Cerutti L.
• Garnache A.
• Jouilĺ A.
• Lastras Martínez Alfonso
• Lastras Martínez Luis Felipe

publication date

• 2005-01-01

funding provided via

• Fondo Nacional de Ciencia y Tecnología, FONACYT: 10-28.71, 2003-C02, 41248-F, 42594, 49550, CO4-FAI-(10-34.77  Grant

published in

• Journal of Applied Physics  Journal

keywords

• Photoreflectance-difference (PRD) spectroscopies; Transmission anisotropy (TA); Anisotropy; Characterization; Energy gap; Heterojunctions; Semiconductor quantum wells; Spectroscopic analysis; Semiconducting gallium arsenide

Digital Object Identifier (DOI)

• 10.1063/1.2058214

start page

end page

volume

• 98

issue

• 6