selected publications
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article
- Analysis of thermodynamic conditions to grow GaAsP epitaxial layers by LPE on GaAs and GaP substrates. MRS Advances. -. 2020-01-01
- Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates. Physica Status Solidi (A) Applications and Materials Science. 217:-. 2020-01-01
- Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell. Journal of Crystal Growth. 311:1650-1654. 2009-01-01
- Temperature dependence of photoluminescence oxygen-related deep levels in Al0.2Ga0.3In0.5P:Be grown by solid source molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26:1089-1092. 2008-01-01
- High quality of 830 nm material grown by solid source molecular beam epitaxy for laser device printing applications. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25:926-930. 2007-01-01
- Obtención e investigación de heteroestucturas láser InGaAsP/GaAs e InGaAsP/InP con emisión de onda de 0.8 μm y 1.3 μm. Revista Mexicana de Fisica. 44:282-289. 1998-01-01
- Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes. Applied Physics Letters. 68:1186-1188. 1996-01-01
- H2O2:HF:C4O6H6 (Tartaric Acid):H2O Etching System for Chemical Polishing of GaSb. Journal of the Electrochemical Society. 142:L189-L191. 1995-01-01
- Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes. Applied Physics Letters. 1186-. 1995-01-01
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conference paper
- Estimation of the instable composition areas and its dependence on the thickness of GalnAsSb layers grown on different substrates. Journal of Physics: Conference Series. -. 2017-01-01