selected publications
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article
- Effect in variation of the cationic precursor temperature on the electrical and crystalline properties of MnS growth by SILAR. Heliyon. 10:-. 2024-01-01
- Non-amphoteric N-type doping with Sn of GaAs(631) layers grown by molecular beam epitaxy. Journal of Applied Physics. 135:-. 2024-01-01
- Study of the electrical and physical properties of the CdS/ZnS n–n homopolar junction synthesized by SILAR. MRS Communications. 14:41-47. 2024-01-01
- Magnetic properties of GaAs:Mn self-assembled nanostructures grown at relatively high-temperature by Molecular Beam Epitaxy. Journal of Magnetism and Magnetic Materials. 475:715-720. 2019-01-01
- InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates. Physica E: Low-Dimensional Systems and Nanostructures. 95:22-26. 2018-01-01
- Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy. Applied Surface Science. 333:92-95. 2015-01-01
... more