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Physical properties of (GaAs)1 − x(Ge2)x: Influence of growth direction
type: Thing
type: Generically Dependent Continuant
issue: 11
type: Entity
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estado: published
crisid: 988
type: Information Content Entity
most specific type: Article
volume: 63
type: Article
related by: authorship 5132
origen: scopus
most specific type: Document
related by: authorship 5133
abstract: (GaAs)1-x(Ge2)x metastable alloys were epitaxially grown on (001), (111), (112), and (113) GaAs by rf magnetron sputtering. A different long-range order parameter behavior with Ge concentration is observed for each growth direction. This provides a direct evidence that growth direction affects the long-range order-disorder transition exhibited by these alloys. The epitaxial growth of these alloys was modeled by a Monte Carlo simulation. The good agreement between the experimental and modeled long-range order parameter evidences that atomic ordering in these alloys is ruled mainly by growth direction and the avoidance of the formation of “wrong” atomic pairs of As-As and Ga-Ga, and not by thermodynamic factors. On the other hand, measurements of the optical gap and Raman scattering, show that the optical properties are governed by near-neighbor correlations and therefore by their short-range order. Hence, the substrate orientation and the long-range order have negligible effect on the optical properties. Fitting the experimental data of the optical gap, we obtained linear expressions that show the fundamental gap behavior with Ge concentration of some of these alloys at room temperature. For 0. © 2001 American Physical Society.
related by: authorship 5134
date time value: article date 988
has publication venue: Physical Review B - Condensed Matter and Materials Physics
e iscopus: 2-s2.0-0001309561
type: Continuant
doi: 10.1103/PhysRevB.63.115328
freetext keyword: alloy; arsenic; gallium; article; chemical analysis; correlation function; measurement; model; parameter; physical chemistry; Raman spectrometry; synthesis

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Physical Review B - Condensed Matter and Materials Physics
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