Journal of Applied Physics
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publication venue for: Raman scattering study of (GaAs)1-x(Si2)x alloys epitaxially grown on GaAs
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Raman scattering study of (GaAs)1-x(Si2)x alloys epitaxially grown on GaAs
crisid: 978
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page end: 4980
issue: 10
origen: scopus
volume: 90
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type: Article
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related by: authorship 5101
abstract: (GaAs)1-x(Si2)x metastable alloys grown on (001), (110), (112), and (111) GaAs substrates, with Si fractions in the range 0≤x≤0.43, were studied by Raman scattering. Two modes near the LO and TO modes of GaAs, besides two local modes associated either with Si-As or Si-Ga and Si-Si bonds, are observed in the Raman spectra. The ratio of integrated intensities of TO-like and LO-like modes (ITO/ILO) is used to evaluate the short range order. It is observed that the zinc blende to diamond transition reported in the literature for these alloys does not influence the Si fraction dependence of the short range order. © 2001 American Institute of Physics.
estado: published
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date time value: article date 978
doi: 10.1063/1.1410886
most specific type: Article
related by: authorship 5100
has publication venue: Journal of Applied Physics
e iscopus: 2-s2.0-0035890790
related by: authorship 5099
page start: 4977
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