Document
type: Class

Terahertz emission from gradient InGaAs surfaces
e iscopus: 2-s2.0-85118464955
type: Document
related by: authorship_66083
origen: scopus
most specific type: Article
artnum: 171111
most specific type: Document
type: Entity
type: Information Content Entity
crisid: 9290
type: Generically Dependent Continuant
issue: 17
type: Article
type: Continuant
type: Thing
related by: authorship_66082
has funding vehicle: Alexander von Humboldt-Stiftung, AvH; Consejo Nacional de Ciencia y Tecnología, CONACYT: 131931, 294440
accesstype: All Open Access, Hybrid Gold
estado: published
has publication venue: Applied Physics Letters
date time value: article date 9290
abstract: We present an experimental study of the terahertz emission from InxGa1−xAs epitaxial layers that were grown while varying the alloy fraction x. We observe the terahertz emission that is significantly different depending on the variation direction of the alloy fraction. We attribute the difference to the significant change of the band bending induced in the growth direction and to the position-dependent variation of the effective mass. © 2021 Author(s).
doi: 10.1063/5.0061918
freetext keyword: Electromagnetic wave emission; Gallium alloys; Indium alloys; Semiconducting indium gallium arsenide; Semiconductor alloys; Alloy fraction; Band bendings; Effective mass; Growth directions; Position dependents; Terahertz emissions; Terahertz waves
volume: 119

Applied Physics Letters
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type: Generically Dependent Continuant
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type: Document
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type: Information Content Entity
publication venue for: Terahertz emission from gradient InGaAs surfaces
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RDF description of Terahertz emission from gradient InGaAs surfaces - http://orbis.uaslp.mx/vivo/individual/scopus9289
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date: 2026-08-25T12:11:47
publisher: vivo
type: Document

Alexander von Humboldt-Stiftung, AvH; Consejo Nacional de Ciencia y Tecnología, CONACYT: 131931, 294440
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type: BFO_0000020
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funding vehicle for: Terahertz emission from gradient InGaAs surfaces

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