Document
Terahertz emission from gradient InGaAs surfaces
We present an experimental study of the terahertz emission from InxGa1−xAs epitaxial layers that were grown while varying the alloy fraction x. We observe the terahertz emission that is significantly different depending on the variation direction of the alloy fraction. We attribute the difference to the significant change of the band bending induced in the growth direction and to the position-dependent variation of the effective mass. © 2021 Author(s).
Electromagnetic wave emission; Gallium alloys; Indium alloys; Semiconducting indium gallium arsenide; Semiconductor alloys; Alloy fraction; Band bendings; Effective mass; Growth directions; Position dependents; Terahertz emissions; Terahertz waves
Generically Dependent Continuant
RDF description of Terahertz emission from gradient InGaAs surfaces - http://orbis.uaslp.mx/vivo/individual/scopus9289
Alexander von Humboldt-Stiftung, AvH; Consejo Nacional de Ciencia y Tecnología, CONACYT: 131931, 294440
Article
Information Content Entity