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Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers
Electric field effects; Energy gap; Film growth; Light reflection; Molecular beam epitaxy; Photoluminescence; Semiconducting aluminum compounds; Semiconducting indium gallium arsenide; Semiconducting zinc compounds; Spectroscopic analysis; Transmission electron microscopy; Aluminum gallium arsenide; Optical spectroscopy; Photoreflectance spectroscopy; Zinc selenide; Semiconducting films
In this work we present a study of ZnSe films grown on buffer layers of the ternary compounds InxGa1-xAs and Al1-xGaxAs by means of photoreflectance (PR), and photoluminescence (PL) spectroscopies and transmission electron microscopy (TEM). The buffer layers of the ternary compounds were grown by molecular beam epitaxy (MBE) employing concentrations with 0.01<x<0.3 and thickness of 5000 angstroms. The films of ZnSe were grown by MBE in a separate II-VI system with a thickness of 6000 angstroms. The measurements of PR allowed us to determine the energy value of the ZnSe band gap, the magnitude of the internal electric fields, and to evaluate the quality of the buffer layers and the ZnSe film. The intensity and width of the excitonic related peaks in the PL spectra and the presence of lines related with defects allowed us to assess the crystalline quality of the films. TEM results have a good correlation with the optical spectroscopies showing that the better samples are those grown on buffer layers of Al0.01Ga0.99As and In0.01Ga0.99As.
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Consejo Nacional de Ciencia y Tecnología