Document
type: Class

Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers
related by: authorship 4737
most specific type: Document
type: Thing
volume: 373
has funding vehicle: Consejo Nacional de Ciencia y Tecnología
date time value: article date 921
origen: scopus
related by: authorship 4738
related by: authorship 4735
related by: authorship 4732
page start: 37
type: Document
type: Continuant
crisid: 921
estado: published
freetext keyword: Electric field effects; Energy gap; Film growth; Light reflection; Molecular beam epitaxy; Photoluminescence; Semiconducting aluminum compounds; Semiconducting indium gallium arsenide; Semiconducting zinc compounds; Spectroscopic analysis; Transmission electron microscopy; Aluminum gallium arsenide; Optical spectroscopy; Photoreflectance spectroscopy; Zinc selenide; Semiconducting films
issue: 1-2
related by: authorship 4736
related by: authorship 4733
type: Information Content Entity
type: Article
type: Entity
type: Generically Dependent Continuant
has publication venue: Thin Solid Films
e iscopus: 2-s2.0-0034262463
doi: 10.1016/S0040-6090(00)01087-7
most specific type: Article
abstract: In this work we present a study of ZnSe films grown on buffer layers of the ternary compounds InxGa1-xAs and Al1-xGaxAs by means of photoreflectance (PR), and photoluminescence (PL) spectroscopies and transmission electron microscopy (TEM). The buffer layers of the ternary compounds were grown by molecular beam epitaxy (MBE) employing concentrations with 0.01<x<0.3 and thickness of 5000 angstroms. The films of ZnSe were grown by MBE in a separate II-VI system with a thickness of 6000 angstroms. The measurements of PR allowed us to determine the energy value of the ZnSe band gap, the magnitude of the internal electric fields, and to evaluate the quality of the buffer layers and the ZnSe film. The intensity and width of the excitonic related peaks in the PL spectra and the presence of lines related with defects allowed us to assess the crystalline quality of the films. TEM results have a good correlation with the optical spectroscopies showing that the better samples are those grown on buffer layers of Al0.01Ga0.99As and In0.01Ga0.99As.
page end: 40
related by: authorship 4734

Continuant
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Thin Solid Films
type: Periodical
type: Entity
type: Information Content Entity
publication venue for: Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers
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type: Journal
type: Collection
type: Generically Dependent Continuant
type: Document
type: Continuant

Entity
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Generically Dependent Continuant
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RDF description of Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers - http://orbis.uaslp.mx/vivo/individual/scopus920
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date: 2026-08-25T01:44:14
publisher: vivo
type: Document

Article
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Information Content Entity
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Consejo Nacional de Ciencia y Tecnología
type: Relationship
type: BFO_0000020
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type: Grant
type: Continuant
funding vehicle for: Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers