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Generically Dependent Continuant
Crystal orientation; Film growth; Order disorder transitions; Semiconducting gallium arsenide; Substrates; X ray diffraction analysis; High resolution X ray diffraction; Semiconducting films
We have grown (GaAs)1-x(Ge2)x layers on GaAs substrates of both (100) and (111) orientations. High-resolution X-ray diffraction is used to study the zincblende-diamond transition. Our experiments show that the (GaAs)1-x(Ge2)x layers grown on (111) substrates do not present a long-range order-disorder transition for any Ge concentration (except for x = 1). This fact gives the first reported evidence for the confirmation of Holloway and Davis theoretical prediction that the growth direction should have an influence in the long-range order parameter.
Long-range order-disorder transition in (GaAs)1-x(Ge2)x grown on GaAs(001) and GaAs(111)
RDF description of Long-range order-disorder transition in (GaAs)1-x(Ge2)x grown on GaAs(001) and GaAs(111) - http://orbis.uaslp.mx/vivo/individual/scopus892
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