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Microelectronics Journal
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publication venue for: Long-range order-disorder transition in (GaAs)1-x(Ge2)x grown on GaAs(001) and GaAs(111)
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485100-5-25374A, 485100-5-28426-E
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funding vehicle for: Long-range order-disorder transition in (GaAs)1-x(Ge2)x grown on GaAs(001) and GaAs(111)

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Generically Dependent Continuant
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Long-range order-disorder transition in (GaAs)1-x(Ge2)x grown on GaAs(001) and GaAs(111)
related by: authorship 4504
type: Information Content Entity
most specific type: Document
page end: 441
type: Document
has funding vehicle: 485100-5-25374A, 485100-5-28426-E
type: Article
has publication venue: Microelectronics Journal
type: Continuant
type: Generically Dependent Continuant
most specific type: Article
estado: published
date time value: article date 893
freetext keyword: Crystal orientation; Film growth; Order disorder transitions; Semiconducting gallium arsenide; Substrates; X ray diffraction analysis; High resolution X ray diffraction; Semiconducting films
type: Thing
doi: 10.1016/S0026-2692(00)00008-2
volume: 31
origen: scopus
abstract: We have grown (GaAs)1-x(Ge2)x layers on GaAs substrates of both (100) and (111) orientations. High-resolution X-ray diffraction is used to study the zincblende-diamond transition. Our experiments show that the (GaAs)1-x(Ge2)x layers grown on (111) substrates do not present a long-range order-disorder transition for any Ge concentration (except for x = 1). This fact gives the first reported evidence for the confirmation of Holloway and Davis theoretical prediction that the growth direction should have an influence in the long-range order parameter.
page start: 439
issue: 6
related by: authorship 4506
crisid: 893
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e iscopus: 2-s2.0-0039184296
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date: 2026-08-24T03:50:47
publisher: vivo
type: Document

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