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Proceedings of SPIE - The International Society for Optical Engineering
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type: Generically Dependent Continuant
publication venue for: Optical and electrical properties of SnO2 thin films after ultra-short pulsed laser annealing
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type: Document
type: Proceedings
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Generically Dependent Continuant
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RDF description of Optical and electrical properties of SnO2 thin films after ultra-short pulsed laser annealing - http://orbis.uaslp.mx/vivo/individual/scopus8606
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date: 2026-08-27T06:31:16
publisher: vivo
type: Document

Article
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Information Content Entity
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Optical and electrical properties of SnO2 thin films after ultra-short pulsed laser annealing
related by: authorship_59387
type: Document
type: Generically Dependent Continuant
type: Information Content Entity
related by: authorship_59380
related by: authorship_59379
volume: 8826
related by: authorship_59381
abstract: Ultra-short pulsed laser sources, with pulse durations in the ps and fs regime, are commonly exploited for cold ablation. However, operating ultra-short pulsed laser sources at fluence levels well below the ablation threshold allows for fast and selective thermal processing. The latter is especially advantageous for the processing of thin films. A precise control of the heat affected zone, as small as tens of nanometers, depending on the material and laser conditions, can be achieved. It enables the treatment of the upper section of thin films with negligible effects on the bulk of the film and no thermal damage of sensitive substrates below. By applying picosecond laser pulses, the optical and electrical properties of 900 nm thick SnO2 films, grown by an industrial CVD process on borofloat®-glass, were modified. The treated films showed a higher transmittance of light in the visible and near infra-red range, as well as a slightly increased electrical sheet resistance. Changes in optical properties are attributed to thermal annealing, as well as to the occurrence of Laser- Induced Periodic Surface Structures (LIPSSs) superimposed on the surface of the SnO2 film. The small increase of electrical resistance is attributed to the generation of laser induced defects introduced during the fast heating-quenching cycle of the film. These results can be used to further improve the performance of SnO2-based electrodes for solar cells and/or electronic devices. © 2013 SPIE.
estado: published
related by: authorship_59376
freetext keyword: Laser surface modification; LIPSS; Optical transmittance; SnO2; Thin film; Ultra Short Laser Pulses Electrical sheet resistance; Laser surface modification; LIPSS; Optical and electrical properties; Periodic surface structures; Processing of thin films; Short laser pulse; SnO2; Opacity; Pulsed lasers; Solar energy; Thin films; Ultrashort pulses; Electric properties
related by: authorship_59385
accesstype: All Open Access, Green
related by: authorship_59377
date time value: conference paper date 8607
most specific type: Conference Paper
type: Entity
related by: authorship_59384
type: Continuant
has publication venue: Proceedings of SPIE - The International Society for Optical Engineering
doi: 10.1117/12.2023635
EI dscopus: 2-s2.0-84886691985
type: Conference Paper
artnum: 88260I
related by: authorship_59383
related by: authorship_59382
type: Thing
crisid: 8607
type: Article
related by: authorship_59386
origen: scopus
most specific type: Document
related by: authorship_59378

Conference Paper
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