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2012 15th International Workshop on Computational Electronics, IWCE 2012
publication venue for: A numerical study of amplification of space charge waves in n-GaN films
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A numerical study of amplification of space charge waves in n-GaN films
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crisid: 7674
artnum: 6242825
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has publication venue: 2012 15th International Workshop on Computational Electronics, IWCE 2012
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EI dscopus: 2-s2.0-84866538144
doi: 10.1109/IWCE.2012.6242825
origen: scopus
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abstract: A Numerical study of amplification of space charge waves (SCW) due to the negative differential conductivity in n-GaN films placed onto a semi-infinite substrate is investigated. A case of transverse non-uniform film is considered. The set of balance equations for concentration, drift velocity, and the averaged energy to describe the dynamics of space charge waves were used jointly with the Poisson equation for the electric field. It is possible to observe an amplification of SCW in n-GaN films of submicron thicknesses at essentially higher frequencies f >100 GHz, when compared with n-GaAs. Two-dimensional simulation of spatial distribution of the alternative part of the electric field of space charge wave in 2D is presented. © 2012 IEEE.
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date time value: conference paper date 7674
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freetext keyword: n-GaN films; negative differential conductivity; space charge 100 GHz; Balance equations; Drift velocities; Higher frequencies; Negative differential conductivities; Numerical studies; Semi-infinite substrates; Space-charge wave; Submicron; Two-dimensional simulations; Amplification; Electric fields; Electronics engineering; Gallium nitride; Ionic conduction; Poisson equation; Electric space charge

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