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Growth of ZnSe and ZnS films on Si(111) substrates with a nitrogen surface treatment
date time value: article date 765
has publication venue: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
page end: 1262
type: Document
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abstract: We have investigated the effects of substrate surface irradiation with nitrogen plasma prior to growth on the initial stages of the heteroepitaxy of ZnSe on Si(111). The reflection high-energy electron diffraction (RHEED) patterns during the pulsed molecular beam epitaxial growth of ZnSe on the N-plasma-treated Si surface showed very well-defined streaks with a twofold reconstruction indicating an atomically flat surface. In sharp contrast, during the initial stages of the ZnSe growth on untreated Si substrates, spotty RHEED patterns with a diffuse background were observed. A strong evidence of the two-dimensional ZnSe nucleation obtained on the N-plasma-treated Si surface was the clear presence of large-amplitude RHEED oscillations. Atomic force microscopy measurements confirmed that we have achieved a substantial improvement on the ZnSe heteroepitaxy on Si substrates. We show that this novel N-plasma substrate treatment is useful for the growth of other Zn-chalcogenides compounds on Si substrates © 1999 American Vacuum Society.
estado: published
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type: Continuant
page start: 1259
volume: 17
origen: scopus
crisid: 765
type: Entity
type: Generically Dependent Continuant
type: Article
doi: 10.1116/1.590735
related by: authorship 3732
e iscopus: 2-s2.0-22644448511
issue: 3

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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
type: Periodical
type: Document
type: Continuant
type: Collection
type: Thing
type: Generically Dependent Continuant
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publication venue for: Growth of ZnSe and ZnS films on Si(111) substrates with a nitrogen surface treatment

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date: 2026-08-25T07:35:00
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type: Document