Collective dimer stress induced dichroism in II-VI semiconductors
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volume: 229
has publication venue: Physica Status Solidi (B) Basic Research
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doi: 10.1002/1521-3951(200201)229:1<155::AID-PSSB155>3.0.CO;2-S
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crisid: 7571
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abstract: The physical origin of sharp resonances in reflectance difference spectroscopy data at the critical points of the dielectric function of bulk semiconductors is shown to arise from an uniaxial in-plane stress component. These resonances are induced at the critical points via lifting the degeneracy of the optical transitions at the L and Γ points due to the resulting anisotropic strain.
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EI dscopus: 2-s2.0-0035994363
issue: 1
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publication venue for: Collective dimer stress induced dichroism in II-VI semiconductors
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RDF description of Collective dimer stress induced dichroism in II-VI semiconductors - http://orbis.uaslp.mx/vivo/individual/scopus7570
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date: 2026-08-25T07:00:24
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