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RDF description of GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots - http://orbis.uaslp.mx/vivo/individual/scopus6570
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date: 2026-08-25T07:00:26
publisher: vivo
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Physica E: Low-Dimensional Systems and Nanostructures
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publication venue for: GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots
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Consejo Nacional de Ciencia y Tecnología, CONACYT: CB 2015- 257358, INFR-2015-01-255489, PNCPN2014-01-248071
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funding vehicle for: GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots

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GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots
type: Article
type: Continuant
crisid: 6571
type: Information Content Entity
related by: authorship_42911
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doi: 10.1016/j.physe.2020.114217
freetext keyword: InAs quantum dots; InGaAs tensor layer; Modulating strain layer; Strain distribution; Strain modulation Gallium arsenide; III-V semiconductors; Indium arsenide; Nanocrystals; Self assembly; Semiconducting gallium; Semiconducting indium gallium arsenide; Semiconductor alloys; X ray diffraction analysis; Critical thickness; Diffusion parameters; Experimental characterization; High resolution X ray diffraction; In-situ characterization; InAs quantum dots; Self assembly process; Strain distributions; Semiconductor quantum dots
volume: 124
has publication venue: Physica E: Low-Dimensional Systems and Nanostructures
abstract: In this study, the quantum dots (QDs) self-assembly properties were affected by strain modulation. The strain of the GaAs (100) surface was modulated prior to the growth of InAs with the aim to tailor the size and distribution of self-assembled QDs. Changes in the strain fields were achieved with the buried GaAs/InGaAs heterostructure by varying the GaAs layer thickness Σ, which significantly influences several parameters collectively involved in the QDs self-assembly process. In situ characterization of the heterostructure shows that the InAs/GaAs critical thickness and the surface diffusion parameter, the latter of which is an indicative of the QDs density, decreased with Σ. High-resolution X-ray diffraction measurements confirmed that depending on Σ, the InGaAs layer can be partially relaxed, presumably through the introduction of dislocations that are advanced by the QDs strain. Numerical simulations of the heterostructures were performed, with the sample%27s geometry and other properties obtained from its experimental characterization as input data. The results confirmed variations in strain resulting from changes in the GaAs/InGaAs heterostructure. These findings contribute to the understanding of strain distribution and can thus lead to improvements in the self-assembly properties of InAs QDs. © 2020 Elsevier B.V.
origen: scopus
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related by: authorship_42906
related by: authorship_42907
artnum: 114217
related by: authorship_42913
date time value: article date 6571
estado: published
abstract: In this study, the quantum dots (QDs) self-assembly properties were affected by strain modulation. The strain of the GaAs (100) surface was modulated prior to the growth of InAs with the aim to tailor the size and distribution of self-assembled QDs. Changes in the strain fields were achieved with the buried GaAs/InGaAs heterostructure by varying the GaAs layer thickness Σ, which significantly influences several parameters collectively involved in the QDs self-assembly process. In situ characterization of the heterostructure shows that the InAs/GaAs critical thickness and the surface diffusion parameter, the latter of which is an indicative of the QDs density, decreased with Σ. High-resolution X-ray diffraction measurements confirmed that depending on Σ, the InGaAs layer can be partially relaxed, presumably through the introduction of dislocations that are advanced by the QDs strain. Numerical simulations of the heterostructures were performed, with the sample's geometry and other properties obtained from its experimental characterization as input data. The results confirmed variations in strain resulting from changes in the GaAs/InGaAs heterostructure. These findings contribute to the understanding of strain distribution and can thus lead to improvements in the self-assembly properties of InAs QDs. © 2020 Elsevier B.V.
e iscopus: 2-s2.0-85086888839
has funding vehicle: Consejo Nacional de Ciencia y Tecnología, CONACYT: CB 2015- 257358, INFR-2015-01-255489, PNCPN2014-01-248071
related by: authorship_42912
related by: authorship_42910
type: Generically Dependent Continuant
related by: authorship_42908
related by: authorship_42915
most specific type: Article
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related by: authorship_42914
related by: authorship_42909

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