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CB-252867-2015
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funding vehicle for: Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates

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RDF description of Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates - http://orbis.uaslp.mx/vivo/individual/scopus6531
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date: 2026-08-25T07:00:27
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Physica Status Solidi (A) Applications and Materials Science
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publication venue for: Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates
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Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates
related by: authorship_42675
has funding vehicle: CB-252867-2015
origen: scopus
crisid: 6532
e iscopus: 2-s2.0-85091534547
abstract: Herein, a report on the growth of crystalline truncated pyramid microstructures by liquid-phase epitaxy of Ga–As liquid phase on GaP (001) substrates under nonequilibrium (NEQ) conditions with different contact times and growth temperatures is provided. The micropyramids (MPs) have rectangular bases which are between 5 and 10 μm long, with the long sides aligned with the [110] direction. Remarkably, the results show that the growth rates of the MP under NEQ are very high compared with those of traditional epitaxial layers grown under near-equilibrium conditions. Spatially resolved microphotoluminescence mappings reveal a spatial dependence of the near-band edge emission in both wavelength and intensity within a single MP. The measured emission-wavelength range corresponds to ternary GaAs1–xPx alloys, which attests to the diffusion of P atoms from the substrate into the MPs during growth. The content of P atoms in the MPs is confirmed by spatially resolved energy-dispersive X-ray spectroscopy. Both studies show that the concentration of P is higher in the {111} planes than in the rest of the MP. A thermodynamic argument is proposed to support the experimental findings. © 2020 Wiley-VCH GmbH
estado: published
freetext keyword: energy-dispersive X-ray spectroscopy; GaAs; GaP substrates; liquid-phase epitaxy; photoluminescence Energy dispersive spectroscopy; Gallium arsenide; Gallium phosphide; III-V semiconductors; Liquids; Substrates; Emission wavelength; Energy dispersive X ray spectroscopy; Equilibrium conditions; Microphotoluminescence; Near band edge emissions; Spatial dependence; Spatially resolved; Truncated pyramids; Chromium compounds
related by: authorship_42670
doi: 10.1002/pssa.202000164
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type: Article
related by: authorship_42676
related by: authorship_42673
has publication venue: Physica Status Solidi (A) Applications and Materials Science
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issue: 21
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volume: 217
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artnum: 2000164
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date time value: article date 6532
most specific type: Article
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related by: authorship_42672