Engineering and Physical Sciences Research Council, EPSRC: EP/N031 776/1, EP/P026 850/1
Generically Dependent Continuant
RDF description of Electrically pumped WSe2-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities - http://orbis.uaslp.mx/vivo/individual/scopus6319
Article
Core Research for Evolutional Science and Technology, CREST: JPMJCR15F3
Document
Electrically pumped WSe2-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities
2D materials; DBR; Graphene; LED; Microcavity; WSe2 Boron nitride; Graphene; Graphene devices; III-V semiconductors; Light; Light emission; Microcavities; Nitrides; Q factor measurement; Reflection; Selenium compounds; Substrates; Transition metals; Van der Waals forces; Dielectric microcavities; Hexagonal boron nitride; Microcavity structures; Optical microcavities; Optoelectronic properties; Peak emission wavelength; Semiconducting transition; Vertical cavity surface emitting; Electroluminescence
Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe2 during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe2 island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe2 EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures. © 2020 The Author(s).
Defense Threat Reduction Agency, DTRA: HDTRA1-12-1-0013
Japan Science and Technology Corporation, JST
Information Content Entity
Ministry of Education, Culture, Sports, Science and Technology of Japan, MEXT