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RDF description of Hydrazine-free chemical bath deposition of WSe2 thin films and bi-layers for photovoltaic applications - http://orbis.uaslp.mx/vivo/individual/scopus6013
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date: 2026-08-24T03:51:13
publisher: vivo
type: Document

Materials Research Express
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publication venue for: Hydrazine-free chemical bath deposition of WSe2 thin films and bi-layers for photovoltaic applications
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Hydrazine-free chemical bath deposition of WSe2 thin films and bi-layers for photovoltaic applications
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type: Generically Dependent Continuant
type: Continuant
type: Article
abstract: We report the photovoltaic performance of a diode based on a p-type tungsten diselenide (WSe2) active region. The device is formed by WSe2 and cadmium sulfide (CdS) layers, both obtained via chemical bath deposition. A novel hydrazine-free chemical formulation allows deposition of WSe2 on glass and flexible Hastelloy substrates. Characterization of WSe2 via Raman spectroscopy shows four bands at 189, 244, 293, and 588 cm-1. The strongest band at 293 cm-1 is assigned to the interlayer interaction mode of the WSe2 layers. The photoluminescent characterization of Hastelloy/CdS/WSe2 samples exhibits two excitonic transitions at 1.7860 and 1.7899 eV. The current density-voltage (J-V) measurements of the CdS/WSe2 structure show a photovoltaic response with VOC = 180 mV, JSC = 0.07 mA cm-2, and FF = 0.22. © 2019 IOP Publishing Ltd.
estado: published
related by: authorship_38596
date time value: article date 6014
type: Thing
most specific type: Document
type: Information Content Entity
related by: authorship_38595
origen: scopus
issue: 10
most specific type: Article
freetext keyword: bilayer; chemical bath deposition; diode; hydrazine-free; WSe2 Cadmium sulfide; Deposition; Diodes; Hydrazine; II-VI semiconductors; Sulfur compounds; Tungsten compounds; Bi-layer; Chemical formulation; Chemical-bath deposition; Interlayer interactions; Photovoltaic applications; Photovoltaic performance; Photovoltaic response; WSe2; Selenium compounds
related by: authorship_38597
doi: 10.1088/2053-1591/ab0efe
type: Entity
e iscopus: 2-s2.0-85071540569
has publication venue: Materials Research Express
volume: 6
crisid: 6014
artnum: 105906