Document
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Continuant
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Thin Solid Films
type: Periodical
type: Entity
publication venue for: Sol-gel growth and characterization of In2O3 thin films
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type: Thing
type: Journal
type: Collection
type: Generically Dependent Continuant
type: Document
type: Continuant

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Generically Dependent Continuant
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RDF description of Sol-gel growth and characterization of In2O3 thin films - http://orbis.uaslp.mx/vivo/individual/scopus5685
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date: 2026-08-25T01:47:36
publisher: vivo
type: Document

Article
type: Class

Sol-gel growth and characterization of In2O3 thin films
type: Continuant
type: Entity
type: Article
origen: scopus
type: Thing
related by: authorship_35986
type: Document
related by: authorship_35982
doi: 10.1016/j.tsf.2017.10.049
type: Generically Dependent Continuant
page start: 383
page end: 390
crisid: 5686
related by: authorship_35987
related by: authorship_35983
date time value: article date 5686
has publication venue: Thin Solid Films
abstract: Indium oxide as thin film and powder was prepared by the sol-gel method. The structural characterization of the film and powder showed that similar crystallite sizes are obtained in samples heat-treated at the same temperature. Thermo-gravimetric analysis and differential scanning calorimetry were performed in order to determine the activation energies of In2O3 formation from precursors and subsequent crystal growth of both kinds of samples. Absorption measurements showed that the bandgap of the sol-gel polycrystalline films deposited on c-oriented sapphire is in excellent agreement with the one found in bulk and epitaxial indium oxide. The annealed films were found to be highly conductive with carrier concentration generally in excess of 1019 cm− 3. It was observed that the electrical characteristics of films annealed at 700 °C remained stable while those of films annealed at lower temperatures exhibited remarkable changes when measurements were repeated after seven months. © 2017 Elsevier B.V.
freetext keyword: Activation analysis; Activation energy; Annealing; Carrier concentration; Crystallite size; Differential scanning calorimetry; Gravimetric analysis; Indium compounds; Oxide films; Sapphire; Sol-gel process; Sol-gels; Thermogravimetric analysis; Absorption measurements; Annealed films; Electrical characteristic; In2O3 thin films; Lower temperatures; Polycrystalline film; Sol-gel growth; Structural characterization; Thin films
type: Information Content Entity
most specific type: Article
volume: 645
e iscopus: 2-s2.0-85034097077
estado: published
related by: authorship_35985
most specific type: Document
related by: authorship_35984
related by: authorship_35981

Information Content Entity
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