Document
type: Class

Continuant
type: Class

Entity
type: Class

Generically Dependent Continuant
type: Class

Journal of the Electrochemical Society
type: Continuant
type: Periodical
type: Generically Dependent Continuant
type: Collection
type: Thing
type: Information Content Entity
publication venue for: H2O2:HF:C4O6H6 (Tartaric Acid):H2O Etching System for Chemical Polishing of GaSb
type: Journal
type: Entity
type: Document

H2O2:HF:C4O6H6 (Tartaric Acid):H2O Etching System for Chemical Polishing of GaSb
origen: scopus
type: Continuant
most specific type: Document
volume: 142
doi: 10.1149/1.2050040
type: Information Content Entity
freetext keyword: Chemical polishing; Etching; Morphology; Optical microscopy; Solutions; Substrates; Surface roughness; Surfaces; Gallium antimonide; Tartaric acid; Semiconducting gallium compounds
type: Generically Dependent Continuant
type: Document
e iscopus: 2-s2.0-0029393255
type: Article
abstract: We present the results of a study of H2O2:HF:C4O6H6(tartaric acid):H2O solution for chemical polishing of GaSb wafers. The influence of etching solution composition on surface morphology was studied. The solutions investigated varied in H2O2 (2.0-3.0 mol) and HF (0.0-5.0 mol) concentrations, but contained a constant concentration of tartaric acid (0.7 mol). It was found that the etchant has excellent polishing properties for GaSb wafers when the HF concentration was less than 1.5 mol. For HF concentration larger than 1.5, the etchant solution produced rough surfaces. The dependencies of the etching rate on solution composition, temperature, and etching time were studied. © 1995, The Electrochemical Society, Inc. All rights reserved.
most specific type: Article
date time value: article date 455
page end: L191
issue: 10
related by: authorship 2025
has publication venue: Journal of the Electrochemical Society
related by: authorship 2024
page start: L189
crisid: 455
type: Entity
type: Thing
estado: published
related by: authorship 2023
related by: authorship 2022

RDF description of H2O2:HF:C4O6H6 (Tartaric Acid):H2O Etching System for Chemical Polishing of GaSb - http://orbis.uaslp.mx/vivo/individual/scopus454
rights: termsOfUse
date: 2026-08-26T10:44:12
publisher: vivo
type: Document

Article
type: Class

Information Content Entity
type: Class