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Generically Dependent Continuant
Chemical polishing; Etching; Morphology; Optical microscopy; Solutions; Substrates; Surface roughness; Surfaces; Gallium antimonide; Tartaric acid; Semiconducting gallium compounds
H2O2:HF:C4O6H6 (Tartaric Acid):H2O Etching System for Chemical Polishing of GaSb
We present the results of a study of H2O2:HF:C4O6H6(tartaric acid):H2O solution for chemical polishing of GaSb wafers. The influence of etching solution composition on surface morphology was studied. The solutions investigated varied in H2O2 (2.0-3.0 mol) and HF (0.0-5.0 mol) concentrations, but contained a constant concentration of tartaric acid (0.7 mol). It was found that the etchant has excellent polishing properties for GaSb wafers when the HF concentration was less than 1.5 mol. For HF concentration larger than 1.5, the etchant solution produced rough surfaces. The dependencies of the etching rate on solution composition, temperature, and etching time were studied. © 1995, The Electrochemical Society, Inc. All rights reserved.
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